Bidve College of Engineering, Latur- 413512- IndiaĮlectronics and Telecommunication Departmentīidve College of Engineering, Latur- 413512- IndiaĪbstract In this paper, we propose an architecture of a CMOS based oscillators using actual capacitor and Inductor component. The proposed designs are based on 14 nm FinFET technology. We are designing these architectures for WI-FI and ISM band of frequency applications. The designed transistorized layout are easy to be integrated with low power consumption. The presented results are obtained using CMOS EDA tool Microwind 3.8 with FinFET 14nm technology with supply voltage of 0.80 V and IO VDD as 1.20 V. The obtained results are verified with the calculated by applying working formulas. Keywords Physical design, CMOS Oscillator, ISM, WI-FI, Microwind 3.8 Now a days, continuous advancement in CMOS technology is going on. FinFET GDI doesnt achieve full swing because of the threshold voltage loss. It can be observed that the nMOS device drives well at zero but poorly at the.
With this advancement, more & more signal processing functions are implemented in the digital domain for low cost, low power consumption, higher performance and yield & higher re-configurability.Īs the area of electronic devices is shrinking with time and VLSI technology shift towards nanometer features FinFET designs with trends of SOC in order to achieve low manufacturing cost. When the gate is at zero, no channel exists so the node s1 is disconnected from the drain.
